Using HBT BiCMOS differential structures at Microwaves in SiGe technologies

Bazzi, H. and Bosse, S. and Delage, S. L. and Barelaud, Bruno and Billonnet, L. and Jarry, B. (2002) Using HBT BiCMOS differential structures at Microwaves in SiGe technologies. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract

This paper discusses the use of differential structures for active functions at microwaves. Starting from the example of a single-ended LNA structure, we show the advantages of using a differential approach with the design examples of a LNA, a floating negative resistance and a differential compensated LC filter structure.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Bazzi, H.
Bosse, S.
Delage, S. L.
Barelaud, Bruno
Billonnet, L.
Jarry, B.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:35
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