Using HBT BiCMOS differential structures at Microwaves in SiGe technologies

Bazzi, H. ; Bosse, S. ; Delage, S. L. ; Barelaud, Bruno ; Billonnet, L. ; Jarry, B. (2002) Using HBT BiCMOS differential structures at Microwaves in SiGe technologies. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

Salva citazione

Citato da

Full text disponibile come:

Anteprima

Documento PDF
Download (243kB) | Anteprima

Abstract

This paper discusses the use of differential structures for active functions at microwaves. Starting from the example of a single-ended LNA structure, we show the advantages of using a differential approach with the design examples of a LNA, a floating negative resistance and a differential compensated LC filter structure.

Abstract

Tipologia del documento

Documento relativo ad un convegno o altro evento (Atto)

Autori