A InGaP/GaAs HBT WLAN Power Amplifier with Power Detector

Lee, Kyung Ai ; Lee, Dong Ho ; Park, Hyun-Min ; Cheon, Sang-Hoon ; Park, Jae-Woo ; Yoo, Hyung-mo ; Hong, Songcheol (2004) A InGaP/GaAs HBT WLAN Power Amplifier with Power Detector. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
Full text available as:
[img]
Preview
PDF
Download (277kB) | Preview

Abstract

A two-stage InGaP/GaAs heterojunction bipolar transistor (HBT) power amplifier is developed for WLAN 802.11b application. This is integrated with power detector that senses input power of power stage in order to decrease output power loss of detecting. The power amplifier delivers up to 26dBm output power with the maximum power-added efficiency (PAE) of 31% including consumption of the power detector under the supply voltage of 3.3V

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Lee, Kyung Ai
Lee, Dong Ho
Park, Hyun-Min
Cheon, Sang-Hoon
Park, Jae-Woo
Yoo, Hyung-mo
Hong, Songcheol
Subjects
DOI
Deposit date
16 Jun 2005
Last modified
17 Feb 2016 14:13
URI

Other metadata

Downloads

Downloads

Staff only: View the document

^