28 dB Gain DC-6 GHz GaInP/GaAs HBT Wideband Amplifiers with and without Emitter Capacitive Peaking

Meng, Chin-Chun ; Wu, Tzung-Han ; Lu, Shey-Shi (2002) 28 dB Gain DC-6 GHz GaInP/GaAs HBT Wideband Amplifiers with and without Emitter Capacitive Peaking. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract

High gain shunt-series shunt-shunt wideband amplifiers with and without capacitive peaking are demonstrated by using GaInP/GaAs HBT technology. Experimental results show that power gain is 28 dB and input/output return loss is better than 12 dB from DC to 6 GHz for the wideband amplifier without emitter capacitive gain peaking. On the other hand, the wideband amplifier with emitter capacitive gain peaking has the same gain but the power gain bandwidth increases up to 8 GHz at the cost of lower input/output return loss. Power and noise performance are very similar for both types of wideband amplifiers. Both circuits have 8 dBm OP1dB and 20 dBm OIP3 at 2.4 GHz Noise figure of both designs are below 2.8 dB from 1GHz to 6GHz. Total current consumption is 67 mA at 5 V supply voltage for both wideband amplifiers.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Meng, Chin-Chun
Wu, Tzung-Han
Lu, Shey-Shi
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:36
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