SiGe:C HBT technology for advanced BiCMOS processes.

Magnee, P. H. C. ; Hurkx, G. A. M. ; Agarwal, P. ; van Noort, W. D. ; Donkers, J. J. T. M. ; Melai, J. ; Aksen, E. ; Vanhoucke, T. ; Vijayaraghavan, M. N. (2004) SiGe:C HBT technology for advanced BiCMOS processes. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

In this paper we discuss the present status of SiGe:C heterojunction bipolar transistors (HBTs), together with some Figures-of-Merit (FOMs) and their relation to technology. We also discuss new innovative solutions to the relatively low breakdown voltage and high-frequency substrate losses of Si technologies, when compared to III-V based technologies.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Magnee, P. H. C.
Hurkx, G. A. M.
Agarwal, P.
van Noort, W. D.
Donkers, J. J. T. M.
Melai, J.
Aksen, E.
Vanhoucke, T.
Vijayaraghavan, M. N.
Settori scientifico-disciplinari
DOI
Data di deposito
16 Giu 2005
Ultima modifica
17 Feb 2016 14:15
URI

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