High gain 110-GHz low noise amplifier MMICs using 120-nm metamorphic HEMTs and coplanar waveguides

Bessemoulin, A. ; Fellon, P. ; Gruenenpuett, J. ; Massler, H. ; Reinert, W. ; Kohn, E. ; Tessmann, A. (2005) High gain 110-GHz low noise amplifier MMICs using 120-nm metamorphic HEMTs and coplanar waveguides. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

This paper presents the design and performance of 110-GHz low noise amplifier MMICs, based on coplanar technology, and utilizing 120-nm gate-length Metamorphic HEMTs. Thanks to a cascode device, a single-stage amplifier achieves 8-dB small signal gain, with less than 4-dB noise figure at 105 GHz, within a chip size of only 0.725 mm2. The 2- and 3-stage LNAs exhibit small signal gains of more than 15- and 22-dB, respectively over the 100-115 GHz frequency range, with associated measured noise figures of 4.5 dB at 105 GHz; the chip area for these circuits are less than 2- and 3 mm2. To the author’s knowledge, these results are amongst the lowest noise figures reported to date for uniplanar amplifier MMICs operating at these frequencies.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Bessemoulin, A.
Fellon, P.
Gruenenpuett, J.
Massler, H.
Reinert, W.
Kohn, E.
Tessmann, A.
Subjects
DOI
Deposit date
15 Feb 2006
Last modified
17 Feb 2016 14:18
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