Single-chip dual-band WLAN power amplifierusing inGaP/GaAs HBT

Lin, Chien-Cheng and Hsu, Yu-Cheng (2005) Single-chip dual-band WLAN power amplifierusing inGaP/GaAs HBT. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

A single-chipdual-band power amplifiermonolithic microwave integrated circuit (MMIC) operatingat 3.5V single supply has been developed for both WLAN2.4GHz and 5.2GHz with IEEE 802.11b/g/a standards applications. The MMIC utilizes the process of WINs Corp.with an InGaP/GaAs HBT process. The dual-band poweramplifierconstructed based on the design of adaptive RF bias chokecircuits and proper output matching networks.The proposed WLAN PA chip provides lowcurrentconsumption and high poweradded efficiency. The WLAN-PA is implemented as a two-stage MMIC with activebiasand input pre-matching and inter-stage matching networksintegrated. In addition, the PAis a broadband poweramplifier with above 20dBflat gain betweenthe frequencybands of 2.2GHz to 5.5GHz.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Lin, Chien-Cheng
Hsu, Yu-Cheng
Subjects
DOI
Deposit date
15 Feb 2006
Last modified
17 Feb 2016 14:19
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