A cost-effective 10 Watt X-band high power amplifier and 1 watt driver amplifier chip-set

de Hek, A.P. ; van der Bent, G. ; van Wanum, M. ; van Vliet, F.E. (2005) A cost-effective 10 Watt X-band high power amplifier and 1 watt driver amplifier chip-set. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

An X-band power amplifier chip-set for communication and radar applications has been developed and tested. The chip set consists of a two- and three-stage high-power amplifier, which have an output power of 10 Watt over the 8.5 – 10.5 GHz frequency band and a driver amplifier with an output power of more than 1 Watt over the 8.5 – 11.5 GHz frequency band. The amplifiers have been developed in the 6-inch 0.5 m power pHEMT process (PP50-10) of WIN Semiconductors. The use of this process in combination with the used innovative design approach results in a cost effective chip set, which is competitive in both performance and price with any available solution.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
de Hek, A.P.
van der Bent, G.
van Wanum, M.
van Vliet, F.E.
Settori scientifico-disciplinari
DOI
Data di deposito
15 Feb 2006
Ultima modifica
17 Feb 2016 14:20
URI

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