DC, RF and low frequency noise characterization of C and In/C doped GalnP/GaAs HBT's

Borgarino, M. and Plana, R. and Escotte, L. and Delage, S. L. and Blanck, H. and Fantini, F. and Graffeuil, J. (1997) DC, RF and low frequency noise characterization of C and In/C doped GalnP/GaAs HBT's. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.
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Abstract

This paper presents a comparative study, based on DC, RF and low frequency noise (LFN) measurements, between Carbon-doped, and Indium/Carbon doped GalnP/GaAs HBT's featuring different emitter widths. Both technologies exhibit an evident emitter size ef­fect, while C-doped devices have larger DC and RF gains and a lower input voltage noise level. The bet­ter performance has been justified in terms of a higher quality of the extrinsic base surface. This explanation was supported by the LFN measurements carried out on self-aligned devices, which revealed an electron dif­fusion current from the emitter toward the base, proba­bly due to the pinning of the Fermi level at the surface. The HBT's have been compared also in terms of relia­bility by means of electrical stress performed at room temperature. The effect, of the stress Was a DC cur­rent gain increase associated with a reduction of the base current and of the input voltage noise lorentzian component. The In/C doped devices exhibited the largest variations, and were more sensitive to the cur­rent stress.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Borgarino, M.
Plana, R.
Escotte, L.
Delage, S. L.
Blanck, H.
Fantini, F.
Graffeuil, J.
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DOI
Deposit date
23 Nov 2005
Last modified
17 Feb 2016 14:21
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