High Power Performances of AlGaN/GaN HEMTs On Sapphire Substrate At F=4GHz

Vellas, N. ; Gaquiere, C. ; Guhel, Y. ; Werquin, M. ; Ducatteau, D. ; Boudart, B. ; de Jaeger, J.C. (2002) High Power Performances of AlGaN/GaN HEMTs On Sapphire Substrate At F=4GHz. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract

The high potential at microwave frequencies of AlGaN/GaN HEMTs on sapphire substrate for power application has been demonstrated in this paper. An output power density close to 5W/mm has been measured on a 2x25x0.5µm² HEMT on sapphire substrate. This result is very interesting because the devices have not been passivated. At present time, it is the best power result in Europe on this substrate.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Vellas, N.
Gaquiere, C.
Guhel, Y.
Werquin, M.
Ducatteau, D.
Boudart, B.
de Jaeger, J.C.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:37
URI

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