Defective states in semi-insulating gallium arsenide substrates

Castaldini, A. and Cavallini, A. and Polenta, L. and Canali, C. and Nava, F. (1997) Defective states in semi-insulating gallium arsenide substrates. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.
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Abstract

Semi-insulating gallium arsenide substrates are widely used for microwave discrete devices and integrated circuits. However, the performance of the above devices may be significantly affected by the substrate quality, i.e. crystal defects and related deep levels. Consequently, a careful characterization of substrates is mandatory to improve both device performance and production yields. In this work we have investigated gallium arsenide substrates from different suppliers and/or differently processed. To these substrates we have applied, discussed and compared different methodologies (current-voltage and capacitance-voltage characteristics as well as spectroscopic methods) to characterize the many deep levels which are either present in as-received semi-insulating substrates or induced by device processing such as ion implantation and the subsequent thermal annealing.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Castaldini, A.
Cavallini, A.
Polenta, L.
Canali, C.
Nava, F.
Subjects
DOI
Deposit date
01 Dec 2005
Last modified
17 Feb 2016 14:24
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