A two-dimensional electrothermal model for GaAs MESFETs

Pesare, M. ; Giorgio, A. ; Passaro, V. M. N. ; Perri, A. G. (1999) A two-dimensional electrothermal model for GaAs MESFETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
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Abstract

A new physical-based electrothermal model for GaAs MESFET is presented. The 2-D electrical model based on the accurate velocity-electric field Chang-Fetterman expression is coupled to a thermal simulator which is able to take into account the thermal dependence of GaAs thermal conductivity and the multilayer structure of a typical chip. The simulator has been compared with the results of a 3-D FDM simulator and measurements. The accuracy is to be considered satisfactory and the CAD tool can easily perform the simulation on a common PC.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Pesare, M.
Giorgio, A.
Passaro, V. M. N.
Perri, A. G.
Subjects
DOI
Deposit date
16 Jan 2006
Last modified
17 Feb 2016 14:26
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