Scaling of GaInP/GaAs HBT equivalent-circuit elements

Rudolph, M. and Doerner, R. and Richter, E. and Heymann, P. (1999) Scaling of GaInP/GaAs HBT equivalent-circuit elements. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
Full text available as:
[img]
Preview
PDF
Download (1MB) | Preview

Abstract

In this paper, GalnP/GaAs HBT's equivalent-circuit elements are investigated with respect to their dependence on layout geome-try. A large number of extracted parameters for HBT's of different layouts is given, as well as simple formulas, relating the element values with properties of the layout. The results are useful for large-signal modeling and layout optimization.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Rudolph, M.
Doerner, R.
Richter, E.
Heymann, P.
Subjects
DOI
Deposit date
16 Jan 2006
Last modified
17 Feb 2016 14:26
URI

Other metadata

Downloads

Downloads

Staff only: View the document

^