Optimised thermal and microwave packaging for wide-band gap transistors : diamond & flip chip

Schaffauser, C. ; Vendier, O. ; Forestier, S. ; Michard, F. ; Geffroy, D. ; Drevon, C. ; Villemazet, JF. ; Cazaux, Jean-Louis ; Delage, S. L. ; Roux, JL. (2005) Optimised thermal and microwave packaging for wide-band gap transistors : diamond & flip chip. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

Wide-band gap (WBG) transistors give a real breakthrough for power devices compared to Silicon (Si) and Gallium Arsenide (GaAs) components. However, for space applications, the high power density of WBG transistors makes the thermal management critical and requires thermal investigations. Some packaging solutions dedicated to those power transistors are presented in this paper. The focus is made on diamond-based packaging with two topologies. In the first one, the die is soldered on a diamond carrier. In the second one, it is flip chip bonded on a diamond circuit. Thermal simulations, thermal cycling and electrical measurement results are given for both configurations.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Schaffauser, C.
Vendier, O.
Forestier, S.
Michard, F.
Geffroy, D.
Drevon, C.
Villemazet, JF.
Cazaux, Jean-Louis
Delage, S. L.
Roux, JL.
Settori scientifico-disciplinari
DOI
Data di deposito
15 Feb 2006
Ultima modifica
17 Feb 2016 14:26
URI

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