SiGe power HBT design considerations for IEEE 802.11 applications

Jiang, Ningyue ; Ma, Zhenqiang ; Ma, Pingxi ; Reddy, Vijay ; Racanelli, Marco (2005) SiGe power HBT design considerations for IEEE 802.11 applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

SiGe power HBTs integrated in SiGe BiCMOS are developed and characterized at 2.4 GHz for 802.11b and 5.8 GHz for 802.11a wireless LAN applications. Design considerations of ballast resistors for SiGe power HBTs at these two frequencies are investigated for both good thermal stability and high RF power performance. The investigations show that emitter ballast resistors or base ballast resistors should be judiciously used for SiGe power HBTs operating at different frequencies in order to extract the best RF performance from these devices. An RF output power of 30.8 dBm with PAE of 50.2 % at 2.4 GHz and an output power of 27.3 dBm with PAE of 23.6 % at 5.8 GHz are achieved from single discrete SiGe power HBTs with 0.4µm emitter width, respectively. These highest performance results demonstrate the great power amplification potential of SiGe HBTs for 802.11 wireless LAN applications.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Jiang, Ningyue
Ma, Zhenqiang
Ma, Pingxi
Reddy, Vijay
Racanelli, Marco
Settori scientifico-disciplinari
DOI
Data di deposito
15 Feb 2006
Ultima modifica
17 Feb 2016 14:26
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