A new reliable fabrication-process for InP based HEMTs and MMICs with gate length from 0.06 to 0.2 um

Nawaz, M. ; Persson, S. H. M. ; Zirath, H. ; Choumas, E. ; Mellberg, A. ; Kollberg, E. L. (1999) A new reliable fabrication-process for InP based HEMTs and MMICs with gate length from 0.06 to 0.2 um. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
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Abstract

We present a complete fabrication process and measured results for InP based HEMTs and MMICs. A major effort has been focused on the development of new and reliable gate and via-hole process both for InP based HEMTs and MMICs. A single exposure is required to define both the footprint and the head of the T-gate by modulation of the exposure doses. The developed gate and via-hole process is reliable and suitable for volume production of InP-HEMTs and MMICs with high yield. A complete MMIC chip includes mesa resistors, microstrip transmission lines, HEMT transistors, and ground via holes. A cutoff frequency fT of 100 GHz and maximum oscillation frequency fmax of 200 GHz was obtained from 0.1 um gate lattice matched AlInAs/GaInAs/InP based HEMTs.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Nawaz, M.
Persson, S. H. M.
Zirath, H.
Choumas, E.
Mellberg, A.
Kollberg, E. L.
Subjects
DOI
Deposit date
15 Feb 2006
Last modified
17 Feb 2016 14:27
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