Modeling of LT-GaAs and LT-Al0.3Ga0.7As MISFET devices

Rao, Rapeta V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S. ; Liou, JJ. (1999) Modeling of LT-GaAs and LT-Al0.3Ga0.7As MISFET devices. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
Full text disponibile come:
[thumbnail of GAAS_99_044.pdf]
Anteprima
Documento PDF
Download (1MB) | Anteprima

Abstract

A theoretical model is developed for LT-GaAs and LT-Al0.3Ga0.7As MISFETs and is compared with experimental data. This model is based upon the analytical solution of Poisson's equation, the current continuity equation and the Chang-Fetterman velocity-field equation. When the device is operating in the linear region and knee region the one-dimensional Poisson equation has been considered. When the device is in the saturation regime, the two-dimensional Poisson equation has been solved analytically. The resulting output current-voltage characteristics are in excellent agreement with experimental data.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Rao, Rapeta V.V.V.J.
Chong, T.C.
Tan, L.S.
Lau, W.S.
Liou, JJ.
Settori scientifico-disciplinari
DOI
Data di deposito
12 Dic 2005
Ultima modifica
17 Feb 2016 14:28
URI

Altri metadati

Statistica sui download

Statistica sui download

Gestione del documento: Visualizza il documento

^