94-GHz low noise amplifier on InP in coplanar technology

Hoel, Virginie ; Boret, Samuel ; Grimbert, Bertrand ; Aperce, Gilles ; Bollaert, S. ; Happy, Henri ; Wallart, Xavier ; Cappy, A. (1999) 94-GHz low noise amplifier on InP in coplanar technology. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
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Abstract

High performances have been achieved at W-band with a 2-stage 0.1 um gate-length InGaAs/InAlAs/InP LM-HEMT MMIC low noise amplifier in coplanar technology. To obtain the T-gate profile, we use silicon nitride SixNy technology, which leads to naturally passivated devices. For a drain-to-source current Ids=350mA/mm the devices demonstrate a maximum intrinsic transconductance Gm of 1600mS/mm and an intrinsic current gain cutoff frequency Fc=220GHz. The extrinsic current gain cut-off frequency Ft is 175GHz. The LNA shows a minimum noise figure of 3.3dB with an associated gain of 11.5dB at 94GHz.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Hoel, Virginie
Boret, Samuel
Grimbert, Bertrand
Aperce, Gilles
Bollaert, S.
Happy, Henri
Wallart, Xavier
Cappy, A.
Subjects
DOI
Deposit date
12 Dec 2005
Last modified
17 Feb 2016 14:28
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