Improvements of Thermal Resistance and Thermal Stress in Quasi-Monolithic Integration Technology (QMIT) with a New Fabrication Process

Joodaki, M. ; Tarraf, A. ; Salih, M. ; Albert, D. ; Schröter-Hohmann, H. ; Scholz, W. ; Kompa, G. ; Hillmer, H. ; Kassing, R. (2002) Improvements of Thermal Resistance and Thermal Stress in Quasi-Monolithic Integration Technology (QMIT) with a New Fabrication Process. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract

Static heat transfer and thermal stress analysis for the new generation quasi-monolithic integration technology (NGQMIT) is presented using a three-dimensional finite element simulator. Effects of different factors and parameters such as the gap between the silicon sidewalls and GaAs-chip (Wg), temperature dependent materials properties, isotropic material properties and backside gold metallization thickness or diamond-filled polyimide are described. It is shown that thermal resistances of 11 °C/W and 8.5 °C/W are possible using 200 µm electroplated gold heat-spreader and diamond-filled polyimide on the backside of the active device, respectively. This promises successful realization of the high frequency circuits containing power active devices using the novel QMIT. In comparison to the earlier fabrication process [1-2], eight times improvement in thermal stress is achieved. This extremely improves lifetime of the packaging. The results of thermal stress simulation are compared with white-light interferomety measurement.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Joodaki, M.
Tarraf, A.
Salih, M.
Albert, D.
Schröter-Hohmann, H.
Scholz, W.
Kompa, G.
Hillmer, H.
Kassing, R.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:37
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