Computer-aided analysis of surface-state effects on kink phenomena in GaAs MESFETs

Horio, K. ; Wakabayashi, A. (1999) Computer-aided analysis of surface-state effects on kink phenomena in GaAs MESFETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
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Abstract

Effects of surface states on kink phenomena in GaAs MESFETs are studied by two-dimensional (2-D) DC and transient sim-ulation including impact ionization of carriers. The Spicer's unified defect model is adoped for a surface-state model. It is shown that a kink in the DC current-voltage characteristics could arise due to a space-charge effect originated from impact ionization of holes and the follow-ing hole capturing by the surface traps. Tran-sient or dynamic simulation indicates that the trap-related kink phenomenon is a rather slow process.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Horio, K.
Wakabayashi, A.
Subjects
DOI
Deposit date
15 Feb 2006
Last modified
17 Feb 2016 14:29
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