Monolithic low noise amplifier for X-band applications

Feldle, Heinz-Peter ; Reber, R. H. (1998) Monolithic low noise amplifier for X-band applications. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
Full text disponibile come:
[thumbnail of GAAS_98_037.pdf]
Anteprima
Documento PDF
Download (1MB) | Anteprima

Abstract

This paper presents the design aspects and performance of a monolithic low noise amplifier (LNA) for X-band applications. The LNA, based on GaAs PM-HEMT technology, shows a noise figure of only 1.1 dB at room temperature and a gain of 19 dB with high gain flatness over a bandwidth of 30%, The design was induced by the requirements of real active phased array antenna modes, e. g. switched applications, high IP3 and damage level. A statistical analysis over a large number of LNAs is added showing the high yield and good uniformity of this device.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Feldle, Heinz-Peter
Reber, R. H.
Settori scientifico-disciplinari
DOI
Data di deposito
16 Feb 2006
Ultima modifica
17 Feb 2016 14:33
URI

Altri metadati

Statistica sui download

Statistica sui download

Gestione del documento: Visualizza il documento

^