Pyroelectric-like response in semi-insulating III-V crystal

Poplavko, Yuri ; Ilchenko, Michael ; Pereverzeva, Larissa ; Prokopenko, Yuri ; Ivaschuk, Anatoliy (1999) Pyroelectric-like response in semi-insulating III-V crystal. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
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Abstract

Under the anisotropy of boundary conditions, a high-gap III-V semiconductor indicates behavior of pyroelectric crystal (in spite of it is a piezoelectric only). Partial strain limitation in the [111]-plate of this crystal provides its substantial electric response to the time-variation in temperature dT(t) or in pressure dp(t). Herewith the voltage sensitivity of semi-insulating GaAs sensor is close to one of the PZT ceramics. However, PZT cell-transducer used in sensor device needs to be integrated with the semiconductor amplifier. Unlike of this, the transducer and the amplifier are various parts of one crystal chip in the sensor device based on III-V crystal.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Poplavko, Yuri
Ilchenko, Michael
Pereverzeva, Larissa
Prokopenko, Yuri
Ivaschuk, Anatoliy
Settori scientifico-disciplinari
DOI
Data di deposito
16 Feb 2006
Ultima modifica
17 Feb 2016 14:34
URI

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