New GaInP/GaAs-HBT large-signal model for power applications

Rudolph, M. and Doerner, R. and Heymann, P. (1998) New GaInP/GaAs-HBT large-signal model for power applications. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
Full text available as:
[img]
Preview
PDF
Download (1MB) | Preview

Abstract

A new GaInP/GaAs HBT model for power applications is presented. It is based on the Gummel-Poon model. Additionally, it accounts for the increase of the thermal resistance at high temperatures and the high collector-current base push-out effect. The model is validated for GaInP/GaAs HBTs.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Rudolph, M.
Doerner, R.
Heymann, P.
Subjects
DOI
Deposit date
16 Feb 2006
Last modified
17 Feb 2016 14:36
URI

Other metadata

Downloads

Downloads

Staff only: View the document

^