Single and double heterojunction bipolar transistors in collector-up topology

Henkel, A. ; Delage, S. L. ; diForte-Poisson, M.-A. ; Floriot, D. ; Chartier, E. (1998) Single and double heterojunction bipolar transistors in collector-up topology. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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Abstract

For the first time, DC- and RF characteristics of single and double heterojunction bipolar transistors (S-HBT and D-HBT respectively) in collector-up topology are measured and compared. Both devices are realized in InGaP/GaAs technology and offer high common emitter breakdown voltage (BVceo > 16V) and high maximum oscillation frequency (fmax > 115GHz)

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