20 Gb/s electroabsorption modulator drivers based on 0.2 um GaAs PHEMT

Demange, D. ; Billard, M. ; Lefevre, R. (1996) 20 Gb/s electroabsorption modulator drivers based on 0.2 um GaAs PHEMT. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.
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Abstract

Electroabsorption modulator drivers using 0.2 um gate length Pseudornorphic High Electron Mobility Transistors (PHEMT) for operation up to 20 Gb/s are presented. Both differential-pair based amplifiers and distributed amplifiers have been implemented and compared in terms of performances, power consumption, design, adaptability and adequation to the specific function to realize. It is shown that, in any case, an adaptation of the classical structure is necessary to get simultaneously the expected bit rate (20 Gb/s), drive voltage swing (2 Vp-p), and voltage gain (at least 10 dB).

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
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AutoreAffiliazioneORCID
Demange, D.
Billard, M.
Lefevre, R.
Settori scientifico-disciplinari
DOI
Data di deposito
16 Feb 2006
Ultima modifica
17 Feb 2016 14:37
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