III-V complementary HIGFET technology for low power microwave and high speed/low power digital integrated circuits

Fawaz, Hussein ; Thiery, Jean-Francois ; Linh, Nuyen ; Mollot, Francis ; Pesant, Jean-Claude ; Francois, Marc ; Muller, Michel ; Delos, E. ; Salmer, Georges (1996) III-V complementary HIGFET technology for low power microwave and high speed/low power digital integrated circuits. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.
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Abstract

A self aligned complementary HIGFET technology has been developed for high speed/low power digital and microwave analog applications. The process uses 9 lithographic steps including two level of interconnect metal. Typical transconductances of 290 mS/mm and 65 mS/mm are acheived on lum gate length N and P-channel devices respectively. 0.5 um gate length N-HIGFET show a Ft of 40 GHz and an intrinsic Fc of 80 GHz. These devices show promise for incorporation in complementary digital, MMIC and RF power circuits.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Fawaz, Hussein
Thiery, Jean-Francois
Linh, Nuyen
Mollot, Francis
Pesant, Jean-Claude
Francois, Marc
Muller, Michel
Delos, E.
Salmer, Georges
Subjects
DOI
Deposit date
16 Feb 2006
Last modified
17 Feb 2016 14:37
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