A design technique for GaAs MMIC differential amplifiers based on physical parameters of the foundry

Alonso, Jose I. ; Lopez, Ernesto J. ; Mahfoudi, Mustapha (1996) A design technique for GaAs MMIC differential amplifiers based on physical parameters of the foundry. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.
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Abstract

This paper presents a simple design technique for differential amplifiers working at frequencies above few GHz, that allows the application of well-known low frequency techniques to microwave circuitry. It is based on the parametrization of the characteristic functions of a differential pair -CMRR and differential gains - in terms of only three design variables: drain resistor Rd gate width Wl and normalized bias current i=Id/Idss A 0.5-6 GHz power divider providing both in-phase power division and gain has been designed using the proposed technique. An amplitude balance <0.2 dB and a phase balance <3° have been measured. The chip has been designed using the 0.5 um, F20 process of GEC-Marconi.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Alonso, Jose I.
Lopez, Ernesto J.
Mahfoudi, Mustapha
Settori scientifico-disciplinari
DOI
Data di deposito
16 Feb 2006
Ultima modifica
17 Feb 2016 14:37
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