Analysis of collapse patterns in multi-finger power AlGaAs/GaAs HBTs

Lu, Ke ; Snowden, Christopher M. ; Pollard, Roger D. (1996) Analysis of collapse patterns in multi-finger power AlGaAs/GaAs HBTs. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.
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Abstract

A new theory is developed in this paper to explain the collapse of current gain in multi-finger power Al­GaAs/GaAs Heterojunction Bipolar Transistors. Two dif­ferent collapse patterns are investigated. The reasons be­hind this unwanted phenomenon are clarified using a sim­ple model to investigate the thermo-electrical interaction between the fingers. The method has been used to predict the collapse in AlGaAs/GaAs HBTs and the agreement is excellent.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Lu, Ke
Snowden, Christopher M.
Pollard, Roger D.
Settori scientifico-disciplinari
DOI
Data di deposito
16 Feb 2006
Ultima modifica
17 Feb 2016 14:37
URI

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