Correlation between permanent degradation of GaAs-based HEMT´s and current DLTS spectra

Meneghesso, Gaudenzio ; Paccagnella, Alessandro ; Haddab, Youcef ; Canali, C. ; Zanoni, Enrico (1996) Correlation between permanent degradation of GaAs-based HEMT´s and current DLTS spectra. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.
Full text available as:
[img]
Preview
PDF
Download (1MB) | Preview

Abstract

In this paper we report on the hot-electrons in­duced degradation in AlGaAs/GaAs HEMT's and Al-GaAs/InGaAs/GaAs PM-HEMT's, consisting in a de­crease in the drain current. We have found that the amount of the degradation is correlated to to the impact-ionization in the channel, which is related to the electron energy. Creation of traps is the degradation mechanism which has been found to be responsible for the observed Id degradation. Drain current DLTS (Deep Level Tran­sient. Spectroscopy) analyses and transconductance fre­quency dispersion measurements have been used to iden­tify properties and localization of these traps. These techniques appear to be a powerful tool to study the relia­bility problems arising in HEMT structures due to defect created by hot electrons.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Meneghesso, Gaudenzio
Paccagnella, Alessandro
Haddab, Youcef
Canali, C.
Zanoni, Enrico
Subjects
DOI
Deposit date
16 Feb 2006
Last modified
17 Feb 2016 14:38
URI

Other metadata

Downloads

Downloads

Staff only: View the document

^