High-power and high-efficiency ion-implanted GaAs MESFETs with buried p-layer

Castelli, A. and Rasa, F. and Scopelliti, L. (1994) High-power and high-efficiency ion-implanted GaAs MESFETs with buried p-layer. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.
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Abstract

High-power and high efficiency GaAs power MESFETs have been developed using a Carbon co-implantation technique.The active channel layer is realized by multiple Silicon implantation with and without Carbon co-implantation in the tail region of the Si donor distribution. Measurements performed on a 4 Watt power devices in the 5.9-6.4 GHz band show typical P.A.E of 29% with an intercept point of 47.8 dBm in class A operation compared to the values of 22% and 46.5 dBm of the same devices realized without any p-buried layer.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Castelli, A.
Rasa, F.
Scopelliti, L.
Subjects
DOI
Deposit date
16 Feb 2006
Last modified
17 Feb 2016 14:41
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