High Uniformity 6” InGaP/GaAs Heterojunction Bipolar transistors

DeLuca, P.M. and Rodrigues, J. and Han, B.-K. and Pan, N. (2000) High Uniformity 6” InGaP/GaAs Heterojunction Bipolar transistors. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

The growth of highly uniform, state-of-the-art InGaP/GaAs heterojunction bipolar transistors is demonstrated in a multi-wafer 6-inch configuration (AIX 2600). The uniformity of thickness, doping, composition, interface properties and minority carrier lifetime are assessed by electrical and structural characterization measurements, and shown to vary by less than ±3% across the wafer. The dc current gain versus base sheet resistance on a high gain structure, has a non-linear dependence on base sheet resistance, typical of high performance InGaP/GaAs HBTs.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
DeLuca, P.M.
Rodrigues, J.
Han, B.-K.
Pan, N.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:39
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