Analysis of correlations between noise and scattering parameters for a consistent FET modeling approach

Caddemi, A. ; Sannino, M. (1994) Analysis of correlations between noise and scattering parameters for a consistent FET modeling approach. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

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Abstract

By means of an original procedure For characterizing and modeling low-noise transistors, the equivalent circuit model of a pseudomorphic HEMT series has been extracted. This model has been employed to analyze the nature of a link between the optimum source reflection coefficient ropt and the S11 parameter exhibited by all experimental data concerning the characterization of MESFETs and HEMTs. The noisy model analysis and the relevant remarks on the obtained results are here reported.

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