Enhancement/Depletion Mode InGaP/AlGaAs PHEMT Process for High Efficiency Power Amplifiers

Tkachenko, Y. ; Zhao, Y. ; Wei, C. ; Bartle, D. (2000) Enhancement/Depletion Mode InGaP/AlGaAs PHEMT Process for High Efficiency Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

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Abstract

An integrated enhancement/depletion mode InGaP/AlGaAs power PHEMT process is demonstrated for various single- and dual-supply high efficiency power amplifiers. This technology utilizes excellent etch selectivity and surface charge screening properties of InGaP material. At 900 MHz D-mode PHEMT features output power density of 630 mW/mm with PAE=85% at 7 V, while E-mode PHEMT features PAE>70% from 2 to 7 V and high output power densities, especially at lower voltages.

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