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Bellone, S. ; Cocorullo, G. ; Rinaldi, N. ; Vitale, G.
(1994)
Analytical model of GaAs BMFET structures.
In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.
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Abstract
A model of the d.c. operation of the GaAs Bipolar Mode Field Effect Transistor (BMFET) is presented. The model in based on a approximate, closed-form solution of the fundamental transport equations, and includes some two-dimensional effects that were not included in previously developed models of silicon BMFET structures. A comparison with the characteristics of a experimental device shows that the incorporation of the 2D effects allows an accurate modeling of the GaAs device.
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