Ka-band HEMT-based low noise amplifier modules

Corazza, G.E. ; Limiti, E. ; Miceli, A. ; Pardini, R. (1992) Ka-band HEMT-based low noise amplifier modules. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.
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Abstract

A two-stage low noise amplifier module for the 35.5 - 36.5 GHz band has been designed and developed. The amplifier is based on a conventional high electron mobility transistor (HEMT) with 0.25 um gate length. An equivalent circuit model for this device was derived from measuraments up to 18 GHz. The amplifier module has been implemented in a hybrid form on 0.254 mm AI2O3 substrate. A noise figure of 2.9 dB with an associated gain of 6.8 dB (coax to microstrip transitions loss included) have been measured at 35.8 GHz. In-band flatness is better than ± 0.15 dB for noise figure and ± 0.5 dB for associated gain.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Corazza, G.E.
Limiti, E.
Miceli, A.
Pardini, R.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Feb 2006
Ultima modifica
17 Feb 2016 14:45
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