60 GHz low noise HEMT MMIC amplifiers and their characterization

Bourne, P. ; Paris, E. ; Redon, T. (1992) 60 GHz low noise HEMT MMIC amplifiers and their characterization. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.
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Abstract

Recent advances achieved in both the high frequency characteristics of microwave probes and the precision and stability of the hardware of the vector network analyzer have extended the present working domain to the millimeter wave length range. These performant measurements have been carried out. They have allowed the realization of a monolithic V-band low noise amplifier. It consists of two stages using 0.25 um HEMTs, and it exhibits more than 12 dB gain with 5 ± 0.5 dB noise over 10% frequency range at 57 GHz. The chip size (including matching and biasing circuits) is 1.0 x 1.5 mm2.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Bourne, P.
Paris, E.
Redon, T.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Feb 2006
Ultima modifica
17 Feb 2016 14:45
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