RF performance of GaAs/Si/Si MESFETs for MIMICs

Halkias, George ; Georgakilas, Alexandros ; Papavassiliou, Christos ; Perantinos, George ; Lagadas, Michael ; Konstantinidis, George ; Christou, A. (1992) RF performance of GaAs/Si/Si MESFETs for MIMICs. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.
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Abstract

It is shown that an intermediate Si epitaxial layer in the GaAs on Silicon system is critical for attaining state of the art MESFET microwave performance. Devices with gate length of 1.3um and width 180um showed unit current gain cutoff frequency (ft) up to 18GHz and maximum power gain cutoff frequency (fmax) of about 30GHz. These results indicate that MMICs can be developed on GaAs/Si/Si wafers with a processing technology suitable for GaAs-Si monolithic integration. The critical requirements for MMICs on Si are also presented.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Halkias, George
Georgakilas, Alexandros
Papavassiliou, Christos
Perantinos, George
Lagadas, Michael
Konstantinidis, George
Christou, A.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Feb 2006
Ultima modifica
17 Feb 2016 14:45
URI

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