CAD-oriented HEMT models from noise and scattering measurements

Caddemi, A. ; Martines, Giovanni ; Sannino, Mario (1992) CAD-oriented HEMT models from noise and scattering measurements. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.
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Abstract

The simultaneous determination of noise, gain and scattering parameters by means of a computer-driven noise figure test-set allows the rapid and accurate characterization of some samples of HEMTs of the same series. An equivalent circuit model representing the behavior of the typical device then is extracted by means of a decomposition approach. Comparison between the model performance and the measured parameters of all devices are reported for the FHR 02FH (by Fujitsu). The modeling procedure is oriented to CAD of (M)MIC low noise amplifiers.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Caddemi, A.
Martines, Giovanni
Sannino, Mario
Subjects
DOI
Deposit date
17 Feb 2006
Last modified
17 Feb 2016 14:46
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