GaAs surface treatments and device applications

Paccagnella, A. ; Callegari, A. (1990) GaAs surface treatments and device applications. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.
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Abstract

The effects of H2 and N2 in-situ plasma treatments prior to the deposition of Schottky contacts or SiO2 passivation on GaAs have been studied, showing a large dependance of the electrical properties on the cleaning procedure. For Ti/Pt and Al diodes, degraded rectifying characteristics result after room-temperature H2 treatments, while diode ideality factors as low as 1.01 were achieved in the temperature range 160-240°C. An increase in the barrier height was also observed with increasing substrate temperature during the plasma treatments, in correlation with H indiffusion in GaAs. *IV values of refractory WNX diodes were enhanced by H2 treatments, up to 0.78 V after 800°C anneals. Improved C-V characteristics of MOS capacitors were found after H2 plasma and a thin Si layer deposition, after successive anneals at 600 and 400°C.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Paccagnella, A.
Callegari, A.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Feb 2006
Ultima modifica
17 Feb 2016 14:47
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