A simple broadband MESFET DRO design for millimeter-wave applications

Dieudonne, J.M. (1990) A simple broadband MESFET DRO design for millimeter-wave applications. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.
Full text disponibile come:
[thumbnail of GAAS_90_013.pdf]
Anteprima
Documento PDF
Download (1MB) | Anteprima

Abstract

The development of an hybrid dielectric resonator oscillator (DRO) based on a MMIC MESFET is described. Only one circuit was designed to cover the K band frequency range. A common source topology with series feedback was employed. The dielectric resonator is coupled to the gate line of the MESFET. Typical results in the K band frequency range with a 4 V supply voltage are an output power between 11 and 13 dBm and a phase noise better than -80 dBc/Hz at 10 kHz from carrier frequency.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Dieudonne, J.M.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Feb 2006
Ultima modifica
17 Feb 2016 14:47
URI

Altri metadati

Statistica sui download

Statistica sui download

Gestione del documento: Visualizza il documento

^