A simple broadband MESFET DRO design for millimeter-wave applications

Dieudonne, J.M. (1990) A simple broadband MESFET DRO design for millimeter-wave applications. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.
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Abstract

The development of an hybrid dielectric resonator oscillator (DRO) based on a MMIC MESFET is described. Only one circuit was designed to cover the K band frequency range. A common source topology with series feedback was employed. The dielectric resonator is coupled to the gate line of the MESFET. Typical results in the K band frequency range with a 4 V supply voltage are an output power between 11 and 13 dBm and a phase noise better than -80 dBc/Hz at 10 kHz from carrier frequency.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Dieudonne, J.M.
Subjects
DOI
Deposit date
17 Feb 2006
Last modified
17 Feb 2016 14:47
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