Design and performance of GaAs MMIC's for L-band low noise front-end applications

Bonato, Gian Luca ; Boveda, Angel ; Ripolles, Olga (1992) Design and performance of GaAs MMIC's for L-band low noise front-end applications. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.
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Abstract

This paper describes the design and performance of a GaAs monolithic Low Noise Amplifier and Mixer designed for use in communication systems in the 1.5 - 2.5 GHz frequency band. The low noise amplifier uses a reactive serial feedback configuration and has a measured noise figure of 1.8 dB at room temperature and an associated gain of 20 dB over the full bandwidth. The mixer IC uses an active adder and a FET Mixer, including also an IF output buffer. It provides 9 dB conversion gain without need of external bias networks. This was the first design step towards the integration of the two circuit functions on a single chip.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Bonato, Gian Luca
Boveda, Angel
Ripolles, Olga
Settori scientifico-disciplinari
DOI
Data di deposito
17 Feb 2006
Ultima modifica
17 Feb 2016 14:48
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