Low frequency dispersion and operation point dependence measurements for nonlinear microwave MESFET modelling

Fernandez, T. ; Mediavilla, A. ; Tazon, A. ; Garcia, J.L. (1992) Low frequency dispersion and operation point dependence measurements for nonlinear microwave MESFET modelling. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.
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Abstract

The present paper proposes an exhaustive comparison between the two methods of extracting the nonlinear parameters of the NE72084 transistor. For this purpose, we have developed a continuous and pulsed automatized set up along with a fitting program that permits us to obtain the total nonlinear transistor model. Furthermore, a software program that permits us to extract the total linear equivalent circuit measuring the scattering parameters in the 2-8 GHz frequency band at several polarization points in order to obtain the quasi-static nonlinear model has been developed. Simulations taking into account low frequency dispersion permit comparisons between the model obtained from pulsed measurements and the quasi-static approach. Experimental measurements show the agreement of the two different models.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Fernandez, T.
Mediavilla, A.
Tazon, A.
Garcia, J.L.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Feb 2006
Ultima modifica
17 Feb 2016 14:48
URI

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