L-band low power monolithic GaAs receiver front ends

Kemppinen, Esa ; Narhi, Tapani ; Jarvinen, Esko (1990) L-band low power monolithic GaAs receiver front ends. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.
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Abstract

Design aspects and performance of monolithic GaAs L-band receiver front ends intended for low power operation are discussed. Design philosophy which decreases the power consumption of the receivers has been adopted. 1 mm depletion type MESFET process (Triquint, USA) has been used to fabricate the circuits. In the simulation of the circuits MWSPICE and TOUCHSTONE software have been used. All the circuits are accessible for on-wafer measurement with Cascade's probe station.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Kemppinen, Esa
Narhi, Tapani
Jarvinen, Esko
Subjects
DOI
Deposit date
17 Feb 2006
Last modified
17 Feb 2016 14:48
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