Improved noise performance of ion-implanted MESFET devices by optimised pre and post implant wafer annealing.

Lanzieri, C. ; D'Eustacchio, P. ; Rescigno, N. ; Cetronio, A. (1990) Improved noise performance of ion-implanted MESFET devices by optimised pre and post implant wafer annealing. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.
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Abstract

In this article we illustrate how the noise performance of ion-implanted MESFET devices can be appreciably improved by means of optimised pre and post implant annealing cycle. With this technique the 12 GHz noise figure of 0.5x300 um devices is reduced from 2.7 dB to 1.8 dB.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Lanzieri, C.
D'Eustacchio, P.
Rescigno, N.
Cetronio, A.
Settori scientifico-disciplinari
DOI
Data di deposito
02 Feb 2006
Ultima modifica
17 Feb 2016 14:48
URI

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