Integrated circuits on GaAs for the temperature range from room temperature up to 300°C

Fricke, K. ; Schweeger, G. ; Wurfl, J. ; Hartnagel, H.L. (1990) Integrated circuits on GaAs for the temperature range from room temperature up to 300°C. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.
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Abstract

The purpose of this paper is to present a technology for GaAs integrated circuits which allows stable operation in the temperature range from 20°C to 300°C. We shall show by some examples that it is possible to fabricate MESFET-based integrated circuits with small temperature dependence up to 300°C. Long term thermal stress tests demonstrate the excellent reliability of the technology. However, the need for adequate design tools will be shown as well, as more complicated circuits have an unpredictable behaviour at very high temperatures.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Fricke, K.
Schweeger, G.
Wurfl, J.
Hartnagel, H.L.
Subjects
DOI
Deposit date
02 Feb 2006
Last modified
17 Feb 2016 14:49
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