Equivalent-voltage approach for modeling low-frequency dispersive effects in microwave FETs

Santarelli, A. ; Zucchelli, G. ; Paganelli, R. ; Vannini, G. ; Filicori, F. (2002) Equivalent-voltage approach for modeling low-frequency dispersive effects in microwave FETs. IEEE Microwave and Wireless Components Letters, 12 (9). pp. 339-341. ISSN 1531-1309
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Abstract

In this paper, a simple and efficient approach for the modeling of low-frequency dispersive phenomena in FETs is proposed. The method is based on the definition of a virtual, nondispersive associated device controlled by equivalent port voltages and it is justified on the basis of a physically-consistent, charge-controlled description of the device. Dispersive effects in FETs are accounted for by means of an intuitive circuit solution in the framework of any existing nonlinear dynamic model. The new equivalent-voltage model is identified on the basis of conventional measurements carried out under static and small signal dynamic operating conditions. Nonlinear experimental tests confirm the validity of the proposed approach.

Abstract
Tipologia del documento
Articolo
Autori
AutoreAffiliazioneORCID
Santarelli, A.
Zucchelli, G.
Paganelli, R.
Vannini, G.
Filicori, F.
Parole chiave
Schottky gate field effect transistors, high electron mobility transistors, microwave field effect transistors, semiconductor device models
Settori scientifico-disciplinari
ISSN
1531-1309
DOI
Data di deposito
28 Mar 2006
Ultima modifica
31 Ott 2012 11:40
URI

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