'Backgating' model including self-heating for low-frequency dispersive effects in III-V FETs

Santarelli, A. ; Filicori, F. ; Vannini, G. ; Rinaldi, P. (1998) 'Backgating' model including self-heating for low-frequency dispersive effects in III-V FETs. Electronics Letters, 34 (20). pp. 1974-1976. ISSN 0013-5194
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Abstract

A new approach is proposed which takes into account both traps and thermal phenomena for the modelling of deviations between static and dynamic drain current characteristics in III-V field effect transistors. The model is based on the well-known `backgating' concept and can easily be identified on the basis of conventional static drain current characteristics and small-signal, low-frequency S parameters. Experimental results confirm the accuracy of the proposed model

Abstract
Tipologia del documento
Articolo
Autori
AutoreAffiliazioneORCID
Santarelli, A.
Filicori, F.
Vannini, G.
Rinaldi, P.
Parole chiave
III-V semiconductors, S-parameters, field effect transistors, semiconductor device models
Settori scientifico-disciplinari
ISSN
0013-5194
DOI
Data di deposito
29 Mar 2006
Ultima modifica
16 Mag 2011 12:01
URI

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