Physics-based large-signal sensitivity analysis of microwave circuits using technological parametric sensitivity from multidimensional semiconductor device models

Bonani, F. ; Guerrieri, S.D. ; Filicori, F. ; Ghione, G. ; Pirola, M. (1997) Physics-based large-signal sensitivity analysis of microwave circuits using technological parametric sensitivity from multidimensional semiconductor device models. IEEE Transactions on Microwave Theory and Techniques, 45 (5). pp. 846-855. ISSN 0018-9480
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Abstract

The authors present an efficient approach to evaluate the large-signal (LS) parametric sensitivity of active semiconductor devices under quasi-periodic operation through accurate, multidimensional physics-based models. The proposed technique exploits efficient intermediate mathematical models to perform the link between physics-based analysis and circuit-oriented simulations, and only requires the evaluation of dc and ac small-signal (dc charge) sensitivities under general quasi-static conditions. To illustrate the technique, the authors discuss examples of sensitivity evaluation, statistical analysis, and doping profile optimization of an implanted MESFET to minimize intermodulation which makes use of LS parametric sensitivities under two-tone excitation

Abstract
Tipologia del documento
Articolo
Autori
AutoreAffiliazioneORCID
Bonani, F.
Guerrieri, S.D.
Filicori, F.
Ghione, G.
Pirola, M.
Parole chiave
MESFET integrated circuits, Schottky gate field effect transistors, circuit analysis computing, doping profiles, field effect MMIC, ion implantation, semiconductor device models, sensitivity analysis, statistical analysis
Settori scientifico-disciplinari
ISSN
0018-9480
DOI
Data di deposito
29 Mar 2006
Ultima modifica
31 Ott 2012 11:41
URI

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