Physical modeling of GaAs MESFETs in an integrated CAD environment: from device technology to microwave circuit performance

Ghione, G. ; Naldi, C.U. ; Filicori, F. (1989) Physical modeling of GaAs MESFETs in an integrated CAD environment: from device technology to microwave circuit performance. IEEE Transactions on Microwave Theory and Techniques, 37 (3). pp. 457-468. ISSN 0018-9480
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Abstract

The linkage between a physical device simulator for small- and large-signal characterization and CAD (computer-aided design) tools for both linear and nonlinear circuit analysis and design is considered. Efficient techniques for the physical DC and small-signal analysis of MESFETs are presented. The problem of physical simulation in a circuit environment is discussed, and it is shown how such a simulation makes possible small-signal models accounting for propagation and external parasitics. Efficient solutions for physical large-signal simulation, based on deriving large-signal equivalent circuits from small-signal analyses under different bias conditions, are proposed. The small- and large-signal characterizations allow physical simulation to be performed efficiently in a circuit environment. Examples and results are presented

Abstract
Tipologia del documento
Articolo
Autori
AutoreAffiliazioneORCID
Ghione, G.
Naldi, C.U.
Filicori, F.
Parole chiave
III-V semiconductors, Schottky gate field effect transistors, circuit CAD, semiconductor device models, solid-state microwave circuits
Settori scientifico-disciplinari
ISSN
0018-9480
DOI
Data di deposito
07 Apr 2006
Ultima modifica
31 Ott 2012 11:49
URI

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