Accurate prediction of PHEMT intermodulation distortion using the nonlinear discrete convolution model

Costantini, A. ; Paganelli, R.P. ; Traverso, P.A. ; Argento, D. ; Favre, G. ; Pagani, M. ; Santarelli, A. ; Vannini, G. ; Filicori, F. (2002) Accurate prediction of PHEMT intermodulation distortion using the nonlinear discrete convolution model. In: IEEE MTT-S International Microwave Symposium Digest, 2002, 2-7 giugno 2002, Seattle, Washington.
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Abstract

A general-purpose, technology-independent behavioral model is adopted for the intermodulation performance prediction of PHEMT devices. The model can be easily identified since its nonlinear functions are directly related to conventional DC and small-signal differential parameter measurements. Experimental results which confirm the model accuracy at high operating frequencies are provided in the paper

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Costantini, A.
Paganelli, R.P.
Traverso, P.A.
Argento, D.
Favre, G.
Pagani, M.
Santarelli, A.
Vannini, G.
Filicori, F.
Parole chiave
high electron mobility transistors, intermodulation distortion, microwave field effect transistors, semiconductor device measurement, semiconductor device models
Settori scientifico-disciplinari
DOI
Data di deposito
07 Apr 2006
Ultima modifica
31 Ott 2012 11:50
URI

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