Accurate prediction of PHEMT intermodulation distortion using the nonlinear discrete convolution model

Costantini, A. ; Paganelli, R.P. ; Traverso, P.A. ; Argento, D. ; Favre, G. ; Pagani, M. ; Santarelli, A. ; Vannini, G. ; Filicori, F. (2002) Accurate prediction of PHEMT intermodulation distortion using the nonlinear discrete convolution model. In: IEEE MTT-S International Microwave Symposium Digest, 2002, 2-7 giugno 2002, Seattle, Washington.
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Abstract

A general-purpose, technology-independent behavioral model is adopted for the intermodulation performance prediction of PHEMT devices. The model can be easily identified since its nonlinear functions are directly related to conventional DC and small-signal differential parameter measurements. Experimental results which confirm the model accuracy at high operating frequencies are provided in the paper

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Costantini, A.
Paganelli, R.P.
Traverso, P.A.
Argento, D.
Favre, G.
Pagani, M.
Santarelli, A.
Vannini, G.
Filicori, F.
Keywords
high electron mobility transistors, intermodulation distortion, microwave field effect transistors, semiconductor device measurement, semiconductor device models
Subjects
DOI
Deposit date
07 Apr 2006
Last modified
31 Oct 2012 11:50
URI

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