MM-wave on-wafer characterization of electro-optic devices: a new, simple approach

Ferrero, A. ; Ghione, G. ; Mantione, F. ; Nespola, A. ; Pensa, S. ; Pirola, M. (2000) MM-wave on-wafer characterization of electro-optic devices: a new, simple approach. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

A new simple experimental set-up both for on-wafer and in-package electrical and electro-optic characterization of electro-optic devices up to 40 GHz is presented. The technique makes only use of a conventional network vector analyzer (NVA) and of a calibrated high-speed photodetector. The electro-optic transmission coefficient is simply deembedded from the electrical S21 using the detector calibrated responsivity. The RF calibration of the set-up implements the RSOL technique. The results obtained are shown to be comparable with the ones given by commercially available instrumentation, both in terms of accuracy and repeatability. The frequency bandwidth is only determined by the NVA bandwidth provided that the photodetector RF output is well above the NVA noise floor. Firstly some comparison with commercially available instrumentation up to 40 GHz on in-package device will be shown to validate the technique, after that, results concerning both in-package and on-wafer devices up to 40 GHz will be reported.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Ferrero, A.
Ghione, G.
Mantione, F.
Nespola, A.
Pensa, S.
Pirola, M.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:41
URI

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